Solid state image sensor with signal amplification

Details Solid state image sensor with signal amplification Solid state image sensor with signal amplification

1985-01-25

1987-05-12

Munson, Gene M.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

357 24, 357 30, H03K 342, H01L 2978, H01L 2714, H01L 3100

Patent

active

046653252

ABSTRACT:
A solid state image sensor has vertical BCCD, semiconductor substrate and photoelectric transducer formed in thickness direction of the semiconductor substrate by comprising SIT (static induction transistor), wherein holes generated by incident light are stored in the photoelectric transducing part, and electrons of a number as many as m-times of the number of the stored holes are read out from the semiconductor substrate to the vertical BCCD, and thus sensitivity multiplication is obtained.

REFERENCES:
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patent: 4300151 (1981-11-01), Nishizawa
patent: 4450464 (1984-05-01), Yamada
patent: 4524391 (1985-06-01), Nishizawa et al.
patent: 4525742 (1985-06-01), Nishizawa et al.
patent: 4556909 (1985-12-01), Yamada
patent: 4562474 (1985-12-01), Nishizawa
patent: 4571624 (1986-02-01), Nishizawa et al.
Nishizawa et al, "SIT Image Converter", vol. 8, Semiconductor Technologies (1983), pp. 219-242.
Nishizawa et al, "Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)", IEEE vol. ED-22, No. 4 (1975), pp. 185-197.
Nishizawa et al, "Static Induction Transistor Image Sensors", IEEE vol. ED-26, No. 12 (1979), pp. 1970-1977.
Ohmi et al, "Non-Destructive Image Sensor", IEDM (1980), pp. 350-354.
Chamberlain, "High Speed Scanner Photoelement with Gain", IBM Tech. Disclosure Bulletin, vol. 19 (4/77) pp. 4458-4460.

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