Solid-state image sensor with photoelectric conversion units...

Details Solid-state image sensor with photoelectric conversion units... Solid-state image sensor with photoelectric conversion units...

2006-11-21

2006-11-21

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S213000, C257S215000, C257S216000, C257SE27130

Reexamination Certificate

active

07138671

ABSTRACT:
A first p+-type region on a surface of a photodiode unit is formed over a region from a surface of the photodiode unit through a surface of a signal charge read-out unit until reaching the charge transfer unit. Also, the following structure is adapted: the structure in which a boundary between the first p+-type region and a p++-type region is not on a same plane with a boundary of an n-type impurity region which forms the photodiode unit on a side of the signal charge read-out unit. Further, a second p+-type region is formed between the first p+-type region and the p++-type region on the surface of the photodiode unit. The second p+-type region has an impurity concentration between the impurity concentrations of the first p+-type region and the p++-type region.

REFERENCES:
patent: 7-142696 (1995-06-01), None
patent: 10-050976 (1998-02-01), None

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