Solid-state image sensor with overlapping split gate electrodes

Details Solid-state image sensor with overlapping split gate electrodes Solid-state image sensor with overlapping split gate electrodes

1994-06-24

1996-01-23

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257291, 257292, 257448, 257459, H01L 2714, H01L 3100

Patent

active

054867118

ABSTRACT:
An amplification-type solid-state image sensor includes a plurality of picture elements each thereof including a phototransistor. The phototransistor includes a plurality of split gate electrodes to which is applied a voltage for inducing carriers of the same conductivity type as a source region and a drain region in a surface of a semiconductor layer forming a channel. During a resetting period a control voltage is applied simultaneously to all of the split gate electrodes and during a photogenerated charge storage period a control voltage is applied alternately to the split gate electrodes. The occurrence of a dark current due to a boundary surface level present at a boundary surface between an insulator layer and the semiconductor layer is restrained. During a signal reading period a carrier inducing voltage is applied to one of the split gate electrodes which is not adjacent to the source region so that the region just below the gate electrode becomes an effective drain region and a photogenerated charge is transferred to and collected at the other gate electrode adjoining the source region, thereby improving the sensitivity of the image sensor.

REFERENCES:
patent: 4524391 (1985-06-01), Nishizawa et al.
patent: 4878120 (1989-10-01), Matsumoto et al.
patent: 5341008 (1994-08-01), Hynecek

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