Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-03-06
2009-10-27
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257S294000
Reexamination Certificate
active
07608866
ABSTRACT:
A solid-state image sensor prevents shading while maintaining the wider dynamic range of an image signal without reducing its optical resolution. The image sensor has plural pairs of higher- and lower-sensitivity photodiodes and micro-lenses each of which is provided over particular one of the higher- and lower-sensitivity photodiodes for collecting the light incident on corresponding one of the higher- and lower-sensitivity photodiodes. The micro-lenses provided over the lower-sensitivity photodiodes have the curvature thereof smaller than that of the other micro-lenses, thereby providing for the lower-sensitivity photodiode a significant amount of light even for a change of the exit pupil position or incident angle or the like that causes the position of an image circle to shift.
REFERENCES:
patent: 5238856 (1993-08-01), Tokumitsu
patent: 5592223 (1997-01-01), Takamura et al.
patent: 6221687 (2001-04-01), Abramovich
patent: 2006/0138498 (2006-06-01), Kim
patent: 4-298175 (1992-10-01), None
Birch & Stewart Kolasch & Birch, LLP
Fujifilm Corporation
Menz Douglas M
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