Solid state image sensor with means for removing excess photocha

Details Solid state image sensor with means for removing excess photocha Solid state image sensor with means for removing excess photocha

1985-12-24

1987-08-18

Rubinson, Gene Z.

Facsimile and static presentation processing

Facsimile

Recording apparatus

35821331, 357 30, H04N 314

Patent

active

046880984

ABSTRACT:
In a solid state image sensor, first electrodes corresponding to pixels are arranged in a predetermined interval on a CCD structure. The first electrodes are electrically connected to storage sections of the CCD structure and electrically insulated from a transferring section of the CCD structure. Second electrodes are arranged in a predetermined interval on a flat surface of an insulating layer formed on the first electrodes and are electrically connected to the first electrodes. A photoconductive film for converting incident light rays to charges is formed on the second electrodes. A third electrode is formed on the photoconductive film through a barrier layer. Fourth electrodes which are electrically connected to the photoconductive film and electrically insulated from the second electrodes are barried in the insulating layer. An external voltage is applied to the fourth electrode.

REFERENCES:
patent: 4236829 (1980-12-01), Chikamura et al.
patent: 4323912 (1982-04-01), Koike et al.
patent: 4453184 (1984-06-01), Hamakawa et al.
patent: 4499384 (1985-02-01), Segawa et al.
patent: 4521798 (1985-06-01), Baker
patent: 4543489 (1985-09-01), Harada et al.
Japanese Journal of Applied Physics, Supplements, 1983, 15th Conference, pp. 209-212, Tokyo, JP; N. Harada et al., "A CCD Image Sensor Overlaid with an a-Si:H/a-SiC:H Photoconversion Layer".

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