Solid-state image sensor with amorphous semiconductor photocondu

Details Solid-state image sensor with amorphous semiconductor photocondu Solid-state image sensor with amorphous semiconductor photocondu

1986-12-19

1988-10-04

Sikes, William L.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 32, 357 65, 357 68, 358212, 35821327, H01L 2714, H01L 2348

Patent

active

047758805

ABSTRACT:
A contact type amorphous linear image sensor is disclosed with planar comb-shaped electrodes. Photoelectric converting elements are linearly aligned on a stripe-shaped amorphous silicon layer formed on an insulative substrate. These elements serve as photoconductive cells and are divided into M cell groups. Each cell unit includes N comb-shaped individual cell electrodes and a multi-tooth comb-shaped common electrode, which are spacially meshed or overlapped with each other. A drive voltage detector is connected through a matrix circuit configuration to the cell electrodes, which are arranged such that two-side-ended cell electrodes surround in each cell unit the both side-ended teeth of the corresponding common electrode, so that the adjacent side-ended teeth of the neighboring common electrodes are electrically shielded by the side-ended teeth of the cell electrodes. A signal detecting pre-amplifier is connected to the common electrodes through analog switches and a load resistor.

REFERENCES:
patent: 4247874 (1981-01-01), Kos et al.
patent: 4288702 (1981-09-01), Ozawa et al.
Patents Abstracts of Japan, vol. 10, No. 69(E-389)[2126], 18th Mar. 1986; & JP-A-60 218 869, (Canon K.K.), 01-11-1985, FIG. 1-3, Abstract.
Japanese Journal of Applied Physics, vol. 21, Suppl. 21-1, pp. 251-256, "Amorphous Silicon Photoconductive Sensor"; T. Kagawa et al.: 1982.
IEDM Tech. Dig. 1981, pp. 309-312, "A 2048-Element Contact Type Linear Image Sensor for Facsimile"; K. Komiya et al.; 1981.

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