Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1993-09-15
1995-12-26
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257232, 257233, 257432, 257435, 257437, 257440, 257788, 257789, H01L 2934, H01L 2714, H01L 3100
Patent
active
054790492
ABSTRACT:
A first transparent protection layer is formed on color filters, and micro lenses are further formed on the first transparent protection layer. Then unevenness due to the micro lenses is flattened by a first transparent resin layer which has water repellency and oil repellency (low surface energy), a high transmittance in visible light range, a high flattening capability in a coating process, and a refractive index lower than the refractive index of the micro lenses. With the above-mentioned arrangement, dust or the like can be difficult to contaminate the surface of the solid state image sensor without loosing the light converging effect of the micro lenses. Even when dust or the like attaches to the surface, it can be easily removed with a cotton swab or the like.
REFERENCES:
patent: 4781844 (1988-11-01), Kortmann et al.
patent: 4841348 (1989-06-01), Shizukuishi et al.
patent: 5239412 (1993-08-01), Naka et al.
T. Aoki, et al., "Solid State Image Sensor", Excerpt on which the exceptions of lack of novelty under Sec. 1 of Art 30 of the Japanese Patent Law is claimed for Japanese Patent Appln. No. 5-14515 (with translation).
Aoki Tetsuro
Naka Shun-ichi
Conlin David G.
Corless Peter F.
Ngo Ngan V.
Sharp Kabushiki Kaisha
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