Solid-state image sensor manufacturing process

Metal working – Method of mechanical manufacture – Assembling or joining

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29576W, 29576E, 29571, H01L 2100, H01L 3100

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active

046673920

ABSTRACT:
A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulating film (20) provided between the substrate (11) and the field insulating film (13). The buried insulating film (20) serve to prevent electrons from flowing between the adjacent nMOS transistors (1). Accordingly, occurrence of a color mixture phenomenon, a blooming phenomenon or a smear phenomenon can be suppressed. In addition, when a p-type junction layer (21) is provided on the substrate (11) and a bias power supply (19) is connected between them, and when the voltage is adjusted, the red color sensitivity of a photodiode consisting of an n-type source region (16) in each nMOS transistor (1) can be uniformly and easily adjusted.

REFERENCES:
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patent: 4400411 (1983-08-01), Yuan et al.
patent: 4412868 (1983-11-01), Brown et al.
Japanese J. of Applied Physics, vol. 21, No. 9, Sep. 1982, pp. L564-L566, Kohetsutanno et al, "Selective Silicon Epitaxy Using Reduced Pressure Technique".
IEEE Symp. on VLSI Technology, Tech Dig. Paper 1982, pp. 116-117, S. Hine et al, "A New Isolation Technology for Bipolar Devices by Low Pressure Selective Silicon Epitaxy".
IEEE IEDM, Dec. 1982, pp. 241-244, N. Endo et al, "Novel Devices Isolation Technology with Selective Epitaxial Growth".

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