Solid-state image sensor, manufacturing method for...

Radiant energy – Photocells; circuits and apparatus – Housings

Reexamination Certificate

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C250S208100

Reexamination Certificate

active

07919743

ABSTRACT:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

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Japanese Office Action (trial decision) mailed Dec. 14, 2010 in Japanese Patent Application No. 2003-285555.
English translation of portion of JP 5-346556 cited in JP Office Action of Dec. 14, 2010 in JP application 2003-285555 (entire JP 5-346556 reference was previously submitted in IDS of Apr. 6, 2009).
English translation of portion of JP 6-326284 cited in JP Office Action of Dec. 14, 2010 in JP application 2003-285555 (entire JP 6-326284 reference was previously submitted in IDS of Apr. 6, 2009).
English translation of portion of JP 10-229180 cited in JP Office Action of Dec. 14, 2010 in JP application 2003-285555 (entire JP 10-229180 reference was previously submitted in IDS of Apr. 6, 2009).
English translation of portion of JP 2003-209230 cited in JP Office Action of Dec. 14, 2010 in JP application 2003-285555 (entire JP 2003-209230 reference was previously submitted in IDS of Apr. 6, 2009).

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