Solid-state image sensor having a plurality of horizontal transf

Details Solid-state image sensor having a plurality of horizontal transf Solid-state image sensor having a plurality of horizontal transf

1988-10-19

1990-05-22

Munson, Gene M.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 30, 35821326, 35821328, 377 62, H01L 2978, H01L 2714, H04N 314, G11C 1928

Patent

active

049281585

ABSTRACT:
Vertical transfer portions are provided for the respective columns of photodetectors arranged in a matrix. A charge transfer direction of every other vertical transfer portions is opposite to that of the remaining vertical transfer portions. The charges transferred in the opposite directions are outputted in different horizontal transfer portions. The charges transferred by the two horizontal transfer portions are outputted therefrom and brought together in a united form so as to be continuously outputted.

REFERENCES:
patent: 4001878 (1977-01-01), Weimer
patent: 4280141 (1981-07-01), McCann et al.
patent: 4577233 (1986-03-01), Kimata
patent: 4581539 (1986-08-01), Kimata
patent: 4583003 (1986-04-01), Kimata
patent: 4774586 (1988-09-01), Koike et al.
patent: 4807037 (1989-02-01), Iesaka et al.
M. Kimata et al "A 480.times.400 Element Image Sensor with a Charge Sweep Device", 1985 IEEE International Solid-State Circuits Conf. Digest of Tech. Papers (Feb. 13, 1985).
M. Kamata et al "A 512.times.512 Element PtSi Schottky-Barrier Infrared Image Sensor", 1987 IEEE Intern'l Solid-State Circuits Conference, Digest of Tech. Papers (Feb. 25, 1987).
M. Kamata et al "A 512.times.512-Element PtSi Schottky-Barrier Infrared Image Sensor", 1987 IEEE Journal of Solid-State Circuits, vol. SC-22, No. 6 (Dec. 1987).

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