Solid state image sensor having a high photoelectric conversion

Details Solid state image sensor having a high photoelectric conversion Solid state image sensor having a high photoelectric conversion

1994-12-09

1996-05-07

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257223, 257225, 257233, H01L 2978, H01L 2966

Patent

active

055148875

ABSTRACT:
In a solid state image sensor comprising a first impurity layer of a first conductivity type forming a photodiode, the impurity layer is composed of a first impurity region formed of a low concentration at a deep level, and a second impurity region formed of a high concentration at a shallow level. The first impurity region extends under a second impurity layer of a second conductivity type formed for device isolation, and also extends under a gate region of a transistor for transferring an electric charge from the photodiode to a CCD channel.

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