Solid-state image sensor employing a gate and diode for bias cha

Details Solid-state image sensor employing a gate and diode for bias cha Solid-state image sensor employing a gate and diode for bias cha

1989-11-16

1991-11-05

Peng, John K.

Facsimile and static presentation processing

Facsimile

Recording apparatus

35821331, 35821326, 35821323, H04N 314, H04N 5335

Patent

active

050634496

ABSTRACT:
A solid-state image sensor comprises signal charge storage diodes formed in a semiconductor substrate, a plurality of signal charge read-out sections formed adjacent to the signal charge storage diodes on the semiconductor substrate, a plurality of signal charge transfer sections formed close to the signal charge read-out sections on the semiconductor substrate, pixel electrodes electrically coupled to the signal charge storage diodes, and a plurality of bias-charge injecting gates and bias-charge injecting diodes, which are provided adjacent to the signal charge transfer sections to inject bias charges into the signal charge storage diodes via the signal charge read-out sections.

REFERENCES:
patent: 4809073 (1989-02-01), Chiba et al.
patent: 4845375 (1989-07-01), Tsushima
patent: 4908518 (1990-03-01), Losee et al.
patent: 4912560 (1990-03-01), Osawa et al.
A High Resolution Staggered-Configuration CCD Imager Overlaid with an a-Si:H Photoconductive Layer; Nozumu Harada et al.; IEEE Trans Electron Device vol. 32, No. 8; Aug. 1985.

Affiliated with

Also associated with

Rating

Solid-state image sensor employing a gate and diode for bias cha does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid-state image sensor employing a gate and diode for bias cha, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state image sensor employing a gate and diode for bias cha will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-502477