Solid state image sensor device with single-layered transfer ele

Details Solid state image sensor device with single-layered transfer ele Solid state image sensor device with single-layered transfer ele

1995-10-18

1997-06-10

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257250, 257432, 257435, 257448, H01L 27148

Patent

active

056378947

ABSTRACT:
A charge coupled device, together with a method for manufacturing the device, is provided which can eliminate a conventional problem, that is, the remaining of a light-receiving film at a great step area and a consequent lowering of a sensitivity resulting from the shutting-off of a portion of incident light. In the charge coupled device, insulating areas are formed in substantially strip-like array on a silicon substrate. Respective transfer electrodes are formed on a gate insulating film on a semiconductor substrate with an insulating areas interposed. The respective phase transfer electrodes are electrically separated by the insulating area. By doing so, the respective phase transfer electrodes can be formed on the same plane without leaving a greater step. This can achieve a thinned light shielding film.

REFERENCES:
patent: 5463232 (1995-10-01), Yamashita et al.

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