Solid-state image sensor decreased in shading amount

Details Solid-state image sensor decreased in shading amount Solid-state image sensor decreased in shading amount

1997-10-20

1999-12-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257432, 257440, H01L 27148, H01L 29768

Patent

active

060085118

ABSTRACT:
In a solid-state image sensor, first color filters for a first color and associated photodiodes are disposed with a uniform pitch in all pixels in a chip. As to microlenses, however, those in pixels located in a central area of the chip are disposed to substantially align with aperture centers of the pixels, and those in pixels distant from the center of the chip are disposed to shift their centers from aperture centers of the pixels by first shift amounts (offset amounts) in a direction toward the chip center or chip peripheries. The first shift amounts are determined, depending on the wavelength of the first color, to increase in a predetermined rate from the chip center toward the chip ends. Second shift amounts for shifting microlenses in pixels for a second color are determined to increase from the chip center toward the chip ends in a rate different from the rate of the first shift amounts accounting the wavelength of the first color.

REFERENCES:
patent: 5493143 (1996-02-01), Hokari
patent: 5576562 (1996-11-01), Konuma
patent: 5583354 (1996-12-01), Ishiba

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