Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-03-11
2011-10-04
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S460000, C257SE31110, C257SE27130
Reexamination Certificate
active
08030726
ABSTRACT:
A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.
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Japanese Office Action issued on Sep. 1, 2009, for corresponding Japanese Patent Application JP 2004-314340.
Japanese Office Action issued on Dec. 22, 2009, for corresponding Japanese Patent Application JP 2004-314340.
K&L Gates LLP
Kuo W. Wendy
Sandvik Benjamin
Sony Corporation
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