Solid state image sensor and method for fabricating the same

Details Solid state image sensor and method for fabricating the same Solid state image sensor and method for fabricating the same

2005-03-29

2005-03-29

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S025000, C438S026000, C438S048000, C438S064000

Reexamination Certificate

active

06872584

ABSTRACT:
In a solid state image sensor having micro lenses, the micro lens and a bonding pad electrode are formed on a planarizing layer. Thus, it is no longer necessary to etch the planarizing layer for exposing the bonding pad under the planarizing layer, by use of a photolithography, and therefore, it is possible to avoid dissolution, deform and detachment of the micro lens, which would have otherwise been caused in the prior art by dissolving a photoresist which was used in the photolithography.

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