Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-06-28
2011-06-28
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S432000, C257S434000, C257S435000, C257S232000, C257S444000, C257S137000, C257SE31001, C257SE27133, C257SE31131, C257S184000, C257S187000, C257S259000, C257S292000, C257S461000
Reexamination Certificate
active
07968888
ABSTRACT:
An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.
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Kasuga Shigetaka
Murata Takahiko
Yamaguchi Takumi
Armand Marc
Fahmy Wael M
Greenblum & Bernstein P.L.C.
Panasonic Corporation
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