Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1998-11-16
2000-09-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257221, 257224, 257243, 257249, 257435, H01L 29768, H01L 27148, H01L 310232
Patent
active
061147184
ABSTRACT:
A dipping in potential well due to direct contact between transfer electrodes and metal wiring causes a drop in transfer efficiency through a CCD register. In order to eliminate or at least reduce the potential dipping, an N.sup.- -type impurity layer that functions as a CCD channel is formed with N.sup.-- -type impurity regions that have impurity concentration lower than that of the N.sup.- -type impurity layer. The N.sup.- -type impurity regions are located below transfer electrodes in alignment with contact apertures.
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T. Nobusada et al., "Frame Interline Transfer CCD Sensor for HDTV Camera", 1989 IEEE International Solid-State Circuits Conference, Feb. 15, 1989, pp. 88-89.
K. Yonemoto et al., "A 2 Million Pixel FIT-CCD Image Sensor for HDTV Camera System", 1990 IEEE International Solid-State Circuits Conference, Feb. 16, 1990, pp. 214-215.
Hokari Yasuaki
Ogawa Chihiro
NEC Corporation
Ngo Ngan V.
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