Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-11-18
1995-07-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257233, 2502081, 327515, H01L 2714, H01L 3100
Patent
active
054344379
ABSTRACT:
The solid state image sensor of the invention comprises a plurality of photosensitive elements arranged in a matrix form, a vertical shift register disposed adjacent each column of the photosensitive elements and adapted to vertically transfer signal charges read from the corresponding photosensitive elements, a storage region for storing signal charges transferred by the vertical shift register and a horizontal shift register adapted to horizontally transfer signal charges read from the storage region, the above vertical shift register comprising units of 2n (n is a positive integer of not less than 3) transfer electrodes which are respectively independent.
REFERENCES:
patent: 4009333 (1977-02-01), Berger et al.
patent: 4447735 (1984-05-01), Horil
patent: 4581539 (1986-04-01), Kimata
patent: 4810901 (1989-03-01), Yamada
Itakura Keijirou
Kokusenya Noboru
Nagayoshi Ryouichi
Nobusada Toshihide
Ozaki Masayoshi
Matsushita Electronics Corporation
Mintel William
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