Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-12-29
2000-08-08
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257248, H01L 29768, H01L 27148
Patent
active
061005533
ABSTRACT:
A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the entire process and maximizing the charge-transferring efficiency are disclosed, the solid-state image sensor having an HCCD and VCCDs including a well region of a second conductivity type formed in a semiconductor substrate of a first conductivity type; a HCCD of the first conductivity type formed on the well region of the second conductivity type; and a plurality of polygate electrodes having sequentially different lengths repeatedly formed on the semiconductor substrate.
REFERENCES:
patent: 5289022 (1994-02-01), Iizuka et al.
patent: 5406101 (1995-04-01), Park
patent: 5760430 (1998-06-01), Kato
"A 1-Megapixel, Progressive-Scan Image Sensor with Antiblooming Control and Lag-Free Operation," IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 981-988.
Moon Sang Ho
Park Yong
LG Semicon Co. Ltd.
Munson Gene M.
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