Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

1986-07-17

1988-04-26

James, Andrew J.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 24, 357 31, 357 32, 250578, H01L 2944, H01L 3108, H01L 2714

Patent

active

047408243

ABSTRACT:
In a solid-state image sensor, a semiconductor structure having storage sections and a transfer section is formed in a substrate and an insulating film is formed on the substrate. Charge transfer electrodes are buried in the insulating film above the transfer section and pixel electrodes are formed on the insulating film and are electrically connected to the storage sections through electrodes, respectively. A photoconductive film for converting to incident light rays to electrical charges is formed on the insulating film, a barrier layer is formed on the film and a transparent electrode is formed on the barrier layer. Electrodes and semiconductor layers are buried in the insulating film such that each of the semiconductor layers is partly contacted to the photoconductive film, thereby a diode structure is formed by the photoconductive film, the semiconductor layer and the pixel electrodes.

REFERENCES:
patent: 4523372 (1985-06-01), Balda
Chikamura, "A Half Inch in Silicon", IEDM, 1984, pp. 552-555, Wash., D.C., Dec. 1984.

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