Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

2007-09-27

2011-10-18

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S432000, C257S340000, C257S433000, C257SE31110, C257SE21001

Reexamination Certificate

active

08039915

ABSTRACT:
A solid-state image sensor (1) includes: an imaging device wafer (2A); a plurality of imaging devices (3) which are formed on the imaging device wafer (2A); a spacer (5) which surrounds the imaging devices (3) on the imaging device wafer (2A) and is joined to the imaging device wafer (2A) with an adhesive (7); a transparent protection member (4) which covers the imaging devices (3) on the imaging device wafer (2A) and is attached on the spacer (5); and a plurality of electrostatic discharge protection devices (10A) which are formed on the imaging device wafer (2A), the electrostatic discharge protection devices (10A) being positioned under the spacer (5), each of the electrostatic discharge protection devices (10A) having diffusion layers (12, 13) and a well layer (11) between the diffusion layers (12, 13), the well layer (11) being provided with a channel stopper (20).

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International Preliminary Report on Patentability (Chapter I) with Written Opinion, mailed Apr. 9, 2009, issued in corresponding International Application No. PCT/JP2007/069399, 7 pages.
Chinese Office Action dated Jul. 30, 2010, corresponding to Chinese Application No. 2007-80036182.6.

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