Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

2008-05-27

2008-05-27

Quach, Tuan N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S233000, C257SE27139

Reexamination Certificate

active

11362183

ABSTRACT:
A solid-state image sensor capable of suppressing blooming and increase of a dark current also when an n-type impurity concentration in a transfer channel region is increased is obtained. In this solid-state image sensor, gate electrodes of a prescribed pixel and another pixel adjacent to the prescribed pixel are provided at a first space, and a larger quantity of second conductivity type impurity is introduced into a region of a first conductivity type transfer channel region, located on the main surface of a substrate, corresponding to the first space as compared with a second conductivity type impurity contained in the remaining region of the transfer channel region other than the region corresponding to the first space.

REFERENCES:
patent: 6331873 (2001-12-01), Burke et al.
patent: 7214974 (2007-05-01), Shin
patent: 7271430 (2007-09-01), Park et al.
patent: 2005/0230720 (2005-10-01), Miyagawa et al.
patent: 2006/0049431 (2006-03-01), Kaida
patent: 2001-53263 (2001-02-01), None

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