Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

1998-11-04

2000-11-14

Pascal, Robert

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330310, H03F 316

Patent

active

061475564

ABSTRACT:
The present invention provides a solid-state image sensor comprising a source follower amplifier on a single chip capable of preventing a gain loss caused by a back gate effect.
In the solid-state image sensor including multi-stage single-chip source follower amplifier, one stage of the multi-stage source follower amplifier has a load transistor 5 whose source and gate are connected to an output signal 3 via a capacitor 7, and a DC voltage 6 is applied via a resistor 8 having a high resistance.

REFERENCES:
patent: 3900790 (1975-08-01), Ohsawa
patent: 3968452 (1976-07-01), Sahara et al.
patent: 4987382 (1991-01-01), Saitoh
patent: 5376898 (1994-12-01), Tanaka et al.
patent: 5589799 (1996-12-01), Madaffari et al.
patent: 5825249 (1998-10-01), Nakano
patent: 5905256 (1999-05-01), Nakano
patent: 6023195 (2000-02-01), Nakano et al.

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