Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

1983-08-03

1986-04-08

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

358213, H01J 4014

Patent

active

045815399

ABSTRACT:
A solid-state image sensor comprises photo sensors (111 to 114, 211 to 214 and 311 to 314), transfer gates (121 to 124, 221 to 224 and 321 to 324), a selecting circuit (800), vertical charge transferring elements (130, 230 and 330) and a driving circuit (900) for applying clock signals to the vertical charge transferring elements. When the vertical charge transferring elements receive signal charge from the photo sensors, the vertical charge transferring elements constitute respectively a continuous potential well, and then transfer of the signal charge in the vertical charge transferring elements is performed by controlling the clock signals applied to the vertical charge transferring elements so as to move a potential barrier successively toward the moving direction of the charge.

REFERENCES:
patent: 4179711 (1979-12-01), Nagumo
patent: 4447735 (1984-05-01), Horii
patent: 4504848 (1985-03-01), Matsumoto et al.
M. Kimata et al, "Platinum Silicide Schottky-Barrier IR-CCD Image Sensors", Journal of Applied Physics, vol. 21 (1982), Supplement 21-1, pp. 231-235.
S. Terakawa et al, "A New Organization Area Image Sensor with CCD Readout through Charge Priming Transfer", IEEE Electron Device Letters, vol. EDL-1, No. 5, May 1980, pp. 86-88.

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