Solid-state image sensor

Details Solid-state image sensor Solid-state image sensor

1988-10-24

1991-08-13

James, Andrew J.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

377 60, 377 61, 377 62, 377 63, 357 30, 35821322, 35821323, H01L 2978, H01L 2714, H01L 3100

Patent

active

050400380

ABSTRACT:
A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.

REFERENCES:
patent: 4001861 (1977-01-01), Carnes
patent: 4518978 (1985-05-01), Takeshita
patent: 4546368 (1985-10-01), Yamanari
patent: 4558341 (1985-12-01), Narabu et al.
patent: 4577233 (1986-03-01), Kimata
patent: 4580155 (1986-04-01), Tsoi et al.
patent: 4581539 (1986-04-01), Kimata
patent: 4661854 (1987-04-01), Savoye
patent: 4695889 (1987-09-01), Portmann
patent: 4758895 (1988-07-01), Elabd
Proceedings SPIE, vol. 930, Apr. 1988, pp. 15-17, Kimata et al, High Density Schottky-Barrier, IR Image Sensor.
"A 480 x 400 Element Image Sensor With a Charge Sweep Device", M. Kimata et al, '85 IEEE Int'l Solid State Circuits Conference, Feb. 13, 1985, pp. 100-101.
"A 1/2 Format Color Image Sensor with 485.times.510 Pixels", M. Yamawaki et al, Electronic Imaging, 1985, pp. 91-94.
Technical Report TEBS101-6ED841 of Institute of Television Engineers of Japan, by M. Kimata et al, pp. 31-36.

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