Solid state image sensing element

Details Solid state image sensing element Solid state image sensing element

1995-09-07

1996-07-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257432, 257440, 257446, H01L 27148, H01L 29768

Patent

active

055347207

ABSTRACT:
A solid state image sensing element including a substrate, photodiode areas each having a plurality of photodiodes in matrix array formed on the substrate, a flat area formed over the substrate including the photodiode areas, color filter layers formed in predetermined areas on the flat area, a top coating layer formed in predetermined areas on the flat area, a top coating layer formed over the substrate including the color filter areas, stripe microlenses each having a flat upper surface arranged to correspond to the photodiodes arranged in one direction in the photodiode areas and formed on the top coating layer, and mosaic microlenses formed on the flat upper surface of the stripe microlens each arranged corresponding to each of the photodiodes in the photodiode area.

REFERENCES:
patent: 4694185 (1987-09-01), Weiss
patent: 5118924 (1992-06-01), Mehra et al.
patent: 5321297 (1994-06-01), Enomoto

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