Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-09-26
1998-04-07
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257435, H01L 27148, H01L 29768, H01L 310232
Patent
active
057367566
ABSTRACT:
A solid-state image sensing device including a light shielding film of aluminum or the like formed to make contact with a silicon substrate over a sensor region so that no insulating film is present between the substrate and the light shielding film in the periphery of an opening of the sensor region. The solid-state image sensing device further includes a potential applying device for applying a predetermined potential to the light shielding film. Accordingly, the solid-state image sensing device can reduce the smear due to the leakage of incident light through between the substrate and the light shielding film in the periphery of the opening of the sensor region and improve the photodetecting characteristics of the sensor region.
REFERENCES:
patent: 5045906 (1991-09-01), Nagaya
patent: 5463232 (1995-10-01), Yamashita et al.
Asai Atsushi
Wakayama Toshiaki
Munson Gene M.
Sony Corporation
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