Solid-state image sensing device with lght shielding film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257233, 257435, H01L 27148, H01L 29768, H01L 310232

Patent

active

057367566

ABSTRACT:
A solid-state image sensing device including a light shielding film of aluminum or the like formed to make contact with a silicon substrate over a sensor region so that no insulating film is present between the substrate and the light shielding film in the periphery of an opening of the sensor region. The solid-state image sensing device further includes a potential applying device for applying a predetermined potential to the light shielding film. Accordingly, the solid-state image sensing device can reduce the smear due to the leakage of incident light through between the substrate and the light shielding film in the periphery of the opening of the sensor region and improve the photodetecting characteristics of the sensor region.

REFERENCES:
patent: 5045906 (1991-09-01), Nagaya
patent: 5463232 (1995-10-01), Yamashita et al.

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