Solid-state image sensing device with bias carrier injection

Details Solid-state image sensing device with bias carrier injection Solid-state image sensing device with bias carrier injection

1986-06-18

1988-07-19

Ng, Jin F.

Facsimile and static presentation processing

Facsimile

Recording apparatus

358223, 35821327, H04N 314

Patent

active

047588942

ABSTRACT:
A multilayered solid-state image sensor has a photoconductive film, which covers pixels formed on a substrate, and acts as a photoelectric converting section for the pixels. The photoconductive film inherently has traps. In an imaging mode of the image sensor, before signal charges are generated in a portion of the photoconductive film corresponding to each pixel upon irradiation of image light, sufficient bias charges to fill all the traps in the photoconductive film are injected into the photoconductive film. Subsequently, excess bias charges remaining in the photoconductive film are removed therefrom. Thus, the traps in the photoconductive film are effectively filled with the bias charges, thereby deactivating the photoconductive film.

REFERENCES:
patent: 4369469 (1983-01-01), Endo et al.
IEEE Transactions on Electron Devices, vol. ED-30, No. 10; A CCD Imager with a Thin-Film Photodetector of a Heterojunction AnSe-An.sub.1-x Cd.sub.x Te; Takao Chikamura et al; Oct. 1983.

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