Solid-state image sensing device including solid-state image...

Details Solid-state image sensing device including solid-state image... Solid-state image sensing device including solid-state image...

2011-06-14

2011-06-14

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S072000, C257S059000, C257S257000, C257S258000, C257S222000

Reexamination Certificate

active

07960762

ABSTRACT:
It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, including: a first conductive type semiconductor layer; a first conductive type pillar-shaped semiconductor layer formed on the first conductive type semiconductor layer; a second conductive type photoelectric conversion region formed on the top of the first conductive type pillar-shaped semiconductor layer, an electric charge amount of the photoelectric conversion region being changed by light; and a high-concentrated impurity region of the first conductive type formed on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance, wherein a transfer electrode is formed on the side of the first conductive type pillar-shaped semiconductor layer via a gate insulating film, a second conductive type CCD channel region is formed below the transfer electrode, and a read channel is formed in a region between the second conductive type photoelectric conversion region and the second conductive type CCD channel region.

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