Solid state image sensing device having no field isolation layer

Details Solid state image sensing device having no field isolation layer Solid state image sensing device having no field isolation layer

1989-08-23

1992-03-24

Britton, Howard W.

Facsimile and static presentation processing

Facsimile

Recording apparatus

358212, 35821331, H04N 314, H04N 5335, H04N 312

Patent

active

050993330

ABSTRACT:
A solid state image sensing device is comprised of a plurality of vertical electrons transfer areas and a plurality of transfer electrodes for receiving different clock signals respectively, a plurality of polysilicon patterns for connecting one of the transfer electrodes in one of the vertical channels to other transfer electrodes receiving the same clock signal in other vertical channels and a plurality of photodiode being alternately disposed to the vertical channels, each of the photodiode being surrounded by a part of each of the polysilicon patterns.

REFERENCES:
patent: 4242700 (1980-12-01), Weimer
patent: 4652925 (1987-03-01), Kimata
patent: 4777519 (1988-10-01), Oshima
patent: 4847692 (1989-07-01), Tabei
"A Shallow Flat p-well Structure for Interline-Transfer CCD Image Sensors" by Miyatake et al, IEEE Trans. Electron Devices, vol. ED-33, No. 4, Apr. 1986, pp. 458-463.

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