Solid state image sensing device having no field isolation layer

Details Solid state image sensing device having no field isolation layer Solid state image sensing device having no field isolation layer

1992-01-10

1993-08-10

Goldstein, Herbert

Facsimile and static presentation processing

Facsimile

Recording apparatus

35821326, 35821311, H04N 314, H04N 5335

Patent

active

052354261

ABSTRACT:
A method of operating a solid state image sensing device having a plurality of electron transfer channels; first and second photodiodes; and first, second, third and fourth electrodes disposed on the electron transfer channels and surrounding the first and second photodiodes. The method includes the step of applying a first potential to the first electrode to transfer electrons from the second photodiode to an electron transfer channel and simultaneously applying a lower potential to the second, third and fourth electrodes to prohibit the electron transfer from the second photodiode to the transfer channel. The method also applies the first potential to the third electrode to transfer electrons from the first photodiode to the electron transfer channel and simultaneously applies the lower potential to the first, second and fourth electrodes to prohibit the electron transfer from the first photodiode to the electron transfer channel. Finally, the method includes the step of sequentially applying a second potential to the first, second, third and fourth electrodes to transfer electrons through the electron transfer channel.

REFERENCES:
patent: 4697200 (1987-09-01), Miyatake
patent: 5043819 (1991-08-01), Cheon et al.
patent: 5063449 (1991-11-01), Shibata et al.

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