Solid state image sensing device having facilitated output signa

Details Solid state image sensing device having facilitated output signa Solid state image sensing device having facilitated output signa

1994-12-14

1997-02-04

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257229, 257232, 257246, 257223, 377 58, H01L 27148

Patent

active

056001592

ABSTRACT:
A solid state image sensing device has a photoelectric transfer section for transducing incident light into signal charges, at least firs% and second charge transfer paths, a charge transferring section for transferring the signal charges from the photoelectric transfer section to the first path at a first timing and for transferring the signal charges transferred to the first path to the second path at a second timing and a charge supply section for applying bias charges to the signal charges to be transferred from the first to the second path. In the device, bias charges supplied to the first path is transferred to the second path. Signal charges are transferred to the first path and then to the second path. The signal and the bias charges both transferred to the second path are outputted.

REFERENCES:
patent: 4443886 (1984-04-01), Matsumoto et al.
patent: 4541068 (1985-09-01), Tower
patent: 4551757 (1985-11-01), Ohkubo et al.
patent: 4912560 (1990-03-01), Osawa et al.

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