Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-12-23
1996-06-04
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257436, 257437, H01L 310232
Patent
active
055236090
ABSTRACT:
A solid-state image sensing device, such as a charge-coupled image sensor, has a plurality of sensor regions arranged in two-dimensions with vertical transfer lines associated with respective vertical rows of the sensor regions for transfer of signal charges read from the sensor regions. Each vertical transfer line comprises a charge transfer region for transferring the signal charges read from the sensor regions. A gate electrode is formed on an insulating layer over the signal charge transfer regions, a light shielding layer is formed on an interlayer insulating layer over the gate electrode, and a buffer film containing hydrogen underlies the light shielding layer. The buffer layer, such as a buffer layer containing hydrogen, prevents damage attributable to film forming processes and the diffusion of impurities from the light shielding layer, and supplies hydrogen into the interface between the substrate and an oxide film to improve the condition of the interface. Thus, dark current can be reduced.
Hille Rolf
Sony Corporation
Tran Minhloan
LandOfFree
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