Solid-state image sensing device driving method and...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257S215000, C257SE51018, C348S272000, C348S311000

Reexamination Certificate

active

07416916

ABSTRACT:
A method of driving a solid-state image sensing device comprises plural photoelectric conversion devices arranged in rows and columns perpendicular to the rows, VCCDs through which charges generated by the photoelectric conversion devices are transferred in the column direction, and an HCCD through which the charges transferred from the VCCDs are transferred in the row direction. The photoelectric conversion devices include plural photoelectric conversion device rows including the photoelectric conversion devices arranged in the rows include first photoelectric conversion device rows each of which different kinds of photoelectric conversion devices are mixed and second photoelectric conversion device rows each of which has one kind of photoelectric conversion devices. An operation of transferring charges read out of each first photoelectric conversion device row from the VCCDs to the HCCD and an operation of transferring the charges transferred to the HCCD in the row direction are performed with discrimination between the charges of different color components.

REFERENCES:
patent: 6914633 (2005-07-01), Yamada
patent: 2004-304247 (2004-10-01), None

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