Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-02-13
2007-02-13
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257SE27146, C257S294000
Reexamination Certificate
active
11028556
ABSTRACT:
A solid state image sensing device comprises a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type provided in the first semiconductor region, a third semiconductor region of second conductivity type provided in the first semiconductor region with a space from the second semiconductor region, a gate electrode provided on the first semiconductor region between the second semiconductor region and the third semiconductor region, a gate insulator layer interposed between the first semiconductor region and the gate electrode, and a fourth semiconductor region of second conductivity type provided below the second semiconductor region in the first semiconductor region.
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Kabushiki Kaisha Toshiba
Matthews Colleen
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Owens Douglas W.
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