Solid state image sensing device and a method of manufacturing t

Details Solid state image sensing device and a method of manufacturing t Solid state image sensing device and a method of manufacturing t

1986-07-30

1989-05-16

Macon, Robert S.

A01L 2978

Patent

active

048314269

ABSTRACT:
Diffusion self-aligned MOS transistors are applied to a solid state image sensing device so as to form in a self-alignment manner control regions (80) in which reading of signal charges from photosignal detecting regions (70) formed on a semiconductor (1) to charge transfer regions (30) is controlled.

REFERENCES:
Ishihara et al. Interline CCD Image Sensor with an Antiblooming Structure, IEEE Transactions on Electron Devices, vol. ED-31, No. 1, Jan. 1984; 83-88.
V. L. Rideout, Polysilicon-Gate DMOSFET with Low Resistance Diffused Interconnection Lines, IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978; 1264-1267.
"An Interline-Transfer CCD Imager with Floating Photodiodes", S. Miyatake et al., IEDM Digest of Technical Papers 1980, pp. 342-345.
"A Zigzag-Transfer CCD Imager", H. Matsumoto et al., ISSCC, Digest of Technical Papers 1978, pp. 28-29.

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