Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-09-18
2007-09-18
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S215000, C257S294000, C257SE31032
Reexamination Certificate
active
10696018
ABSTRACT:
A solid-state image sensing device that is free of kTC noise, can eliminate black smear and dark current, has a larger numerical aperture, and can eliminate the problem of insufficient area of the light-receiving portion. Photodiode PD is formed as the light-receiving portion in the formation region of first semiconductor region15. Light is received by semiconductor layer14in this region, and the generated signal charge is accumulated. Semiconductor layer12, 14, gate electrode for pixel selection13a, first semiconductor region15, second semiconductor region16, third semiconductor region17, etc., form transistor Tr1for pixel selection. The threshold of junction transistor JT1, composed of semiconductor substrate10, semiconductor layer14, and second semiconductor region16, etc., is modulated by means of the signal charge accumulated in semiconductor layer14in the light-receiving portion. When transistor Tr1for pixel selection is ON, a voltage modulated according to the signal charge is output.
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Bardy, III W. James
Ingham John C
Kempler William B
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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