Solid state image sensing device

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 30, 357 59, 250211J, 307221D, H01L 2978, H01L 2904, H01L 2714, H01L 3100

Patent

active

041410246

ABSTRACT:
A solid state image sensing device having a semiconductor substrate, an insulating layer disposed on one major surface of the substrate, plural channel stopper regions formed in the substrate in faced relation to the major surface of the substrate, each channel stopper region being extended in the column direction with a distance between adjacent ones and plural sets of electrodes disposed over the insulating layer, each set including a pair of electrode members, each electrode member being extended in the row direction, in which a window portion is formed in the pair of electrode members at one side of the distance between adjacent channel stopper regions and the width of the window portion in the column direction is selected more than a predetermined value.

REFERENCES:
patent: 3813541 (1974-05-01), Foss et al.
patent: 3932775 (1976-01-01), Kosonocky
patent: 4012587 (1977-03-01), Ochi et al.
patent: 4081841 (1978-03-01), Ochi et al.
Carnes "Charge-Coupled Imaging: State of the Art", 3rd European Solid State Device Res. Conf., Munich (9/73), Papers, pp. 83-107.

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