Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2011-06-07
2011-06-07
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S232000, C257S233000, C257S240000, C257S243000, C257S248000, C257SE21158, C257SE27150
Reexamination Certificate
active
07956388
ABSTRACT:
It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a light-receiving area. The solid-state image pickup element comprises a p-type planar semiconductor, a hole formed in the p-type planar semiconductor, a p+-type region formed in a bottom of the hole, a p+-type isolation region formed in a part of a sidewall of the hole and connected to the p+-type region, an n-type photoelectric conversion region formed beneath the p+-type region, a transfer electrode formed on the entire sidewall of the hole through a gate dielectric film, a CCD channel region formed in a top of the p-type planar semiconductor, and a read channel formed in a region of the p-type planar semiconductor between the n-type photoelectric conversion region and the CCD channel region.
REFERENCES:
patent: 5029321 (1991-07-01), Kimura
patent: 6087685 (2000-07-01), Harada
patent: 7364960 (2008-04-01), Lyu
patent: 2009/0283804 (2009-11-01), Masuoka et al.
patent: 59-129463 (1984-07-01), None
patent: 01-168059 (1989-07-01), None
patent: 02-278874 (1990-11-01), None
patent: 02-304976 (1990-12-01), None
patent: 03-161970 (1991-07-01), None
patent: 03-285335 (1991-12-01), None
patent: 06-097416 (1994-04-01), None
patent: 06-252375 (1994-09-01), None
patent: 06-268189 (1994-09-01), None
patent: 10-107249 (1998-04-01), None
patent: 2001-308309 (2001-11-01), None
International Search Report for International Application No. PCT/JP2008/069321, dated Nov. 25, 2008, 7 pages.
Written Opinion of the International Searching Authority for International Application No. PCT/JP2008/069321, dated Nov. 25, 2008, 9 pages.
Masuoka Fujio
Nakamura Hiroki
Brinks Hofer Gilson & Lione
Huynh Andy
Unisantis Electronics (Japan) Ltd.
LandOfFree
Solid-state image pickup element and solid-state image... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid-state image pickup element and solid-state image..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state image pickup element and solid-state image... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2710738