Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-05-14
1999-09-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257233, 257292, 257294, 257240, 257249, 257250, H01L 27148, H01L 29768
Patent
active
059593180
ABSTRACT:
A solid state image pickup device includes a semiconductor substrate, a CCD channel region in the semiconductor substrate, a plurality of polygates over the CCD channel regions, and a photoelectric conversion region having a portion above an uppermost surface of the semiconductor substrate.
REFERENCES:
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patent: 5250825 (1993-10-01), Negishi et al.
patent: 5514887 (1996-05-01), Hokari
patent: 5614741 (1997-03-01), Harada et al.
patent: 5693967 (1997-12-01), Park et al.
Aoki et al, "A 1,024 Element Linear CCD Sensor With PN Junction Photodiode", The Transactions of The IECE of Japan, vol. I 62, No. 6, Jun. 1979, pp. 434-435.
Park Chul Ho
Shim Jin Seop
LG Semicon Co. Ltd.
Mintel William
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