Solid state image pickup device utilizing microcrystalline and a

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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357 2, 357 63, 357 59, 427 87, H01L 2714

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active

045232148

ABSTRACT:
A solid state image pickup device comprising a semiconductor substrate provided with light detecting sections and a scanning circuit for sequentially selecting the signals detected by the light detecting sections, wherein each light detecting section contains a silicon layer in which microcrystalline silicon and amorphous silicon are uniformly distributed and the crystal structure varies substantially continuously throughout. The light detecting section may further contain a hydrogenated amorphous silicon layer containing 6 to 37 atomic % of nitrogen, which is positioned on the silicon layer defined above. The light detecting section is connected with electrodes, one of which is transparent.

REFERENCES:
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4342044 (1982-07-01), Ovshinsky et al.
patent: 4433342 (1984-02-01), Patel et al.
patent: 4434318 (1984-02-01), Gibbons
Carlson, "Photovoltaics V: Amorphous Silicon Cells", IEEE Spectrum, Feb., 1980, 39-41.

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