Solid state image pickup device in which the transfer gate areas

Details Solid state image pickup device in which the transfer gate areas Solid state image pickup device in which the transfer gate areas

1986-01-13

1987-05-05

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Compensating for or preventing signal charge deterioration

357 24, 357 30, G11C 1928, H01L 2978, H01L 2714, H01L 3100

Patent

active

046637710

DESCRIPTION:

BRIEF SUMMARY
TECHNICAL FIELD

This invention relates to solid state image pickup devices comprising a charge transfer device, and more particularly is directed to an improved solid state image pickup device of the interline transfer type, which can suppress deterioration of the quality of a picture obtained in response to an image pickup signal output therefrom, which are caused by the undesirable phenomena called "blooming" and "smear", without being provided with an overflow drain therein.


TECHNICAL BACKGROUND

Solid state image pickup device comprising a charge transfer device such as a charge coupled device (hereinafter referred to as a CCD) are classfied broadly into the frame transfer type and the interline transfer type, and there are advantages common to both types that they can be constructed as devices of small size and light weight and can be operative with low power consumption and with high reliability. Accordingly, the solid state image pickup devices comprising CCD image pickup devices are image pickup devices which are expected to be successful. However, previously proposed CCD image pickup devices have encountered several problems such as the undesirable phenomena called "blooming" and "smear".
There have been proposed some measures for reducing deterioration in the quality of a picture reproduced in response to an image pickup signal output from the CCD image pickup device, which are caused by the blooming and the smear. For example, it is considerably effective for reducing deterioration in the quality of the reproduced picture caused by the blooming to provide an overflow drain in the CCD image pickup device, which is operative to drain superfluous charges overflowing from photo-sensing elements contained during the device in a light receiving period. However, such an overflow drain provided in the CCD image pickup device would raise disadvantages such as the area of each photo-sensing element is reduced or the degree of integration of the photo-sensing elements is reduced, so that photo-sensitivity and image-resolvability of the device are degraded.
Accordingly, a CCD image pickup device which can suppress deteriorations in the quality of a picture obtained in response to an image pickup signal output therefrom caused by the blooming and the smear, has been proposed which have a photo-sensing and vertical transfer portion and a horizontal transfer portion, both of which are provided in the form similar to those employed in a CCD image pickup device of the interline transfer type. A storage portion provided in a form similar to that used in a CCD image pickup device of the frame transfer type between the photosensing and vertical transfer portion and the horizontal transfer portion, wherein signal charges in vertical transfer portions contained in the photo-sensing and vertical transfer portion are transferred to the storage portion at high speed and each of the vertical transfer portions which are vacant acts as the overflow drain during the light receiving period.
Such a solid state image pickup device developed from the CCD image pickup device of the interline transfer type is referred to as a solid state image pickup device of the hybrid type hereinafter. In the solid state image pickup device of the hybrid transfer type, signal charges read out to the vertical transfer portions from photodetectors contained also in the photo-sensing and vertical transfer portion are transferred to the storage portion at high speed, and the signal charges transferred to the storage portion are further transferred to the horizontal transfer portion from the storage portion in turn during every period corresponding to a horizontal blanking period. Each of the vertical transfer portions, from which the signal charges have been transferred to the storage period so as to vacate them, acts as the overflow drain for excessive charges overflowing from the photodetectors and needless charges leaking into the vertical transfer portions, during the light receiving period. Then, prior to a read out period, in which the si

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patent: 4489423 (1984-12-01), Suzuki
patent: 4498013 (1985-02-01), Kuroda et al.
patent: 4518978 (1985-05-01), Takeshita

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