Solid-state image pickup device having lower power consumption

Details Solid-state image pickup device having lower power consumption Solid-state image pickup device having lower power consumption

2006-10-10

2006-10-10

Vu, Ngoc-Yen (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S301000, C250S208100

Reexamination Certificate

active

07119840

ABSTRACT:
The invention is intended to raise the potential at an amplification transistor without increasing a source voltage, and to operate each pixel unit at a lower voltage. A reset transistor and a transfer transistor are serially connected between a driving power source (driving voltage Vdd) and an output of a PD. A floating diffusion (FD) node is provided between a source of the reset transistor and a drain of the transfer transistor. A selection transistor and an amplification transistor are serially connected between a vertical signal line and the driving power source. A gate of the amplification transistor is connected to the FD node. The amplification transistor and the selection transistor are connected at positions reversal to those in a conventional device; namely the amplification transistor is disposed on the side nearer to the vertical signal line. Then, the selection transistor is turned on after the end of reset operation by the reset transistor.

REFERENCES:
patent: 6850278 (2005-02-01), Sakurai et al.

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