Solid state image pickup device capable of draining...

Details Solid state image pickup device capable of draining... Solid state image pickup device capable of draining...

2007-09-18

2007-09-18

Srivastava, Vivek (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S294000, C257S230000, C438S079000

Reexamination Certificate

active

11287280

ABSTRACT:
A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

REFERENCES:
patent: 5589698 (1996-12-01), Nakashiba
patent: 6215521 (2001-04-01), Surisawa et al.
patent: 5-183820 (1993-07-01), None

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