Television – Camera – system and detail – Solid-state image sensor
Patent
1994-06-09
1995-06-13
Razavi, Michael T.
Television
Camera, system and detail
Solid-state image sensor
257232, 257639, 257640, H04N 5335
Patent
active
054247756
ABSTRACT:
A p type well is formed on a silicon substrate. An n.sup.- type region forming a photo diode is formed in the p type well. A p type region is also formed in the p type well. The p type region is used for surrounding the n type region which becomes a vertical CCD register part. Generally, such a structure is called a Hi-C structure. A P.sup.+ type region for controlling the potential height when transferring is formed between the photo diode and the vertical CCD register part. A P.sup.+ type region is formed for electrical separation. A P.sup.++ type region is formed on the surface of a silicon substrate of the photo diode. On the silicon substrate, a gate oxide film is grown. A silicon nitride film is grown in a specified region on the gate oxide film. On the silicon nitride film, a polysilicon electrode which is a conductive electrode, acting as a driving electrode, is formed. On the surface of the polysilicon electrode, a polysilicon oxide film is grown by thermal oxidation. A silicon nitride film as a nitride insulation film is formed on the surface of the polysilicon oxide film. A top oxide film formed by thermally oxidizing the silicon nitride film is formed on the surface of the silicon nitride film. A refractory metal light-shield film is formed on the surface of the top oxide film. When a Poole-Frenkel current flows through a trap in the silicon nitride film, the oxide films formed above and beneath the silicon nitride film function as a barrier to prevent leakage current from flowing.
REFERENCES:
patent: 3865652 (1975-02-01), Agusta
patent: 3911560 (1975-10-01), Amelio et al.
patent: 4319261 (1982-03-01), Kub
patent: 4618878 (1986-10-01), Aoyaka et al.
patent: 4831426 (1989-05-01), Kimata et al.
patent: 4954867 (1990-09-01), Hosaka
patent: 5077592 (1991-12-01), Janesick
patent: 5321282 (1994-06-01), Taguchi
Deguchi Yasuyuki
Kamisaka Wataru
Okada Hiroyuki
Ho Tuan V.
Matsushita Electronics Corporation
Razavi Michael T.
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