Solid-state image pickup device and method of manufacturing...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S060000, C438S070000, C438S075000, C438S144000, C438S401000, C438S459000, C438S469000, C257S459000, C257SE21158, C257SE31124, C257SE31022, C257SE31131, C257SE31131, C257SE31131, C257SE31131, C257SE31131, C257SE31131, C257SE31097, C257SE27013, C257SE27134, C257SE27133, C257SE27135

Reexamination Certificate

active

07977141

ABSTRACT:
A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of the first and second holes, forming a contact and an alignment mark by embedding a conducting material in the first and second holes, forming a photodiode in the semiconductor substrate, forming a wiring layer including a connecting part for connecting to the contact and a wiring for connecting to the connecting part, bonding a supporting substrate on the wiring layer, exposing the contact and the alignment mark on the surface of the semiconductor substrate by reducing the semiconductor substrate in thickness, and forming a filter and a lens on the photodiode based on the alignment mark.

REFERENCES:
patent: 2005/0104148 (2005-05-01), Yamamoto et al.
patent: 2006/0197007 (2006-09-01), Iwabuchi et al.
patent: 2008/0237762 (2008-10-01), Swain et al.
patent: 2009/0057539 (2009-03-01), Iwabuchi et al.
patent: 2009/0065681 (2009-03-01), Iwabuchi et al.
patent: 2005-150463 (2005-06-01), None
patent: 2007-13089 (2007-01-01), None

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