Solid-state image pickup device and method for manufacturing suc

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257223, 257250, 257412, H01L 27148, H01L 29768

Patent

active

054830907

ABSTRACT:
A plurality of channel separting regions are formed on a substrate with a space therebetween to segment an channel region. A first insulating layer is formed on the substrate, and a polycrystalline silicon layer is formed thereon and is then subject to patterning so as to provide a plurality of first transfer electrodes in the direction crossing the channel separating region. A second insulating layer is formed on the first transfer electrode and on the substrate having been exposed by the patterning, and a second transfer electrodes are formed at a position between the first transfer electrodes on the second insulating layer. By setting the thickness of each transfer electrodes and the each insulating layer to a predetermined value, the interference of the visible light is controlled, and the transparency rate of the visible light is improved. Further, by increasing the thickness of the transfer electrode at regions other than the light-receiving region, the contact with the electrode is improved, and the operation at regions other than the light-receiving region is improved.

REFERENCES:
patent: 4481538 (1984-11-01), Battson et al.
patent: 4658278 (1987-04-01), Elabo et al.
patent: 4695860 (1987-09-01), Blanchard et al.

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