Solid state image pickup device and manufacturing method therefo

Details Solid state image pickup device and manufacturing method therefo Solid state image pickup device and manufacturing method therefo

1997-11-19

2000-02-29

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257220, 257222, 257229, 257230, 257242, H01L 27148, H01L 29768, H01L 2714

Patent

active

060312599

ABSTRACT:
A method for manufacturing a light receiving portion for a solid state image pickup device includes the steps of forming a well of a second impurity type on a substrate of a first impurity type, forming a channel stop within an upper surface of the well, forming a vertical CCD portion within the upper surface of the well, forming a gate insulating layer on the upper surface of the well, channel stop and the vertical CCD portion, forming a charge carrying gate electrode above the vertical CCD portion, forming a light receiving photo diode by ion-implanting impurities of the first impurity type, forming a first impurity layer on the light receiving photo diode by ion-implanting impurities of the second impurity type into a surface of the light receiving photo diode, removing a portion of the gate insulating layer above the light receiving photo diode, depositing an insulating layer containing impurities of the first impurity type on the gate insulating layer, the charge carrying gate electrode and the first impurity layer, and performing a heat treatment to form a second impurity layer by doping an upper surface of the first impurity layer with the impurities of the insulating layer.

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patent: 5424775 (1995-06-01), Kamisaka et al.
patent: 5619049 (1997-04-01), Kim

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