Solid-state image pickup device and manufacturing method of the

Details Solid-state image pickup device and manufacturing method of the Solid-state image pickup device and manufacturing method of the

1994-11-23

1995-07-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257249, 257250, 257229, 257232, H01L 2978, H01L 2714, H01L 3100

Patent

active

054323630

ABSTRACT:
Photoelectric converting parts and vertical CCD register parts are formed in a semiconductor substrate. Polysilicon electrodes are formed on the vertical CCD register parts. On the polysilicon electrodes, polysilicon oxide film and dielectric film are deposited. On the polysilicon electrodes, contact windows are formed by mask matching and etching. The contact windows are formed in the first polysilicon electrode and second polysilicon electrode so as to realize four-phase drive of the solid-state image pickup device. Polysilicon film and tungsten silicide film are formed thereon. By etching these films, a first wiring is formed. A second wiring of aluminum film is formed thereon through an interlayer dielectric film. Hence, a high transfer efficiency and a favorable smear noise characteristic are presented at low illumination.

REFERENCES:
patent: 5202282 (1993-04-01), Son
M. Yamagishi et al., "A 2 Million Pixel FIT-CCD Image Sensor for HDTV Camera Systems", IEEE Transactions on Electronic Devices, vol. 38, No. 5, pp. 976-978 (May 1991).

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